Datasheet > KST8550S

KST8550S

更新时间： 2024-09-30 11:32:07

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	163K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KST8550S 数据手册

SMD Type

Transistors

PNP Transistors

KST8550S

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Collector current: IC-=0.5A

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

-25

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.5

P^C

0.3

T^j

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

IC=-100 A, IE=0

Min

-40

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V^CBO

V^CEO

V^EBO

I^CBO

I^CEO

I^EBO

IC=-1mA, IB=0

IE=-100 A, IC=0

VCB=-40V, IE=0

VCE=-20V, IB=0

VEB=-3V, IC=0

-0.1

350

Collector cut-off current

Emitter cut-off current

V^CE=-1V, IC=-50mA

V^CE=-1V, IC=-500mA

120

DC current gain

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^CE(sat)IC=-500mA, IB=-50mA

V^BE(sat)IC=-500mA, IB=-50mA

-0.5

-1.2

f^T

VCE= -6V, IC= -20mA,f=30MHz

150

MHz

hFE Classification

2TY

Marking

Rank

hFE

120 200

200 350

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