5秒后页面跳转
KST2222A PDF预览

KST2222A

更新时间: 2024-09-24 22:32:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 46K
描述
General Purpose Transistor

KST2222A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.24Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

KST2222A 数据手册

 浏览型号KST2222A的Datasheet PDF文件第2页浏览型号KST2222A的Datasheet PDF文件第3页 
KST2222A  
General Purpose Transistor  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
75  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
40  
V
CEO  
EBO  
6
V
I
600  
350  
150  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Storage Temperature  
C
T
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
BV  
I =10µA, I =0  
75  
40  
6
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =10mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
V
=60V, I =0  
0.01  
300  
µA  
CBO  
CB  
E
h
* DC Current Gain  
V
V
V
V
V
=10V, I =0.1mA  
35  
50  
75  
100  
40  
FE  
CE  
CE  
CE  
CE  
CE  
C
=10V, I =1mA  
C
=10V, I =10mA  
C
=10V, I =150mA  
C
=10V, I =500mA  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
I =150mA, I =15mA  
0.3  
1.0  
V
V
CE  
BE  
C
B
I =500mA, I =50mA  
C
B
(sat)  
I =150mA, I =15mA  
0.6  
1.2  
2.0  
V
V
C
B
I =500mA, I =50mA  
C
B
f
Current Gain Bandwidth Product  
Output Capacitance  
Noise Figure  
I =20mA, V =20V, f=100MHz  
300  
MHz  
pF  
T
C
CE  
C
V
=10V, I =0, f=1MHz  
8
4
ob  
CB  
E
NF  
I =100µA, V =10V  
dB  
C
CE  
R =1K, f=1MHz  
S
t
Turn On Time  
Turn Off Time  
V
V
=30V, I =150mA  
35  
ns  
ns  
ON  
CC  
C
=0.5V, I =15mA  
BE  
B1  
t
V
=30V, I =150mA  
285  
OFF  
CC  
C
I
=I =15mA  
B1 B2  
* Pulse Test: PW300µs, Duty Cycle2%  
Marking  
1P  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, November 2002  

KST2222A 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2222A-7-F DIODES

功能相似

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT2222LT1G ONSEMI

功能相似

General Purpose Transistors
MMBT2222ALT1G ONSEMI

功能相似

General Purpose Transistors

与KST2222A相关器件

型号 品牌 获取价格 描述 数据表
KST2222A_06 FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
KST2222AD87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KST2222AL99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KST2222AMTF FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor General Purpose Transistor
KST2222AMTF ONSEMI

获取价格

NPN 外延硅晶体管
KST2222AMTF_NL FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KST2222ATF SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KST2222A-TF SAMSUNG

获取价格

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR
KST2222ATI SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KST2222ATR SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,