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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| KST1623L7 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
|
| KST1623L7D87Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon |
|
| KST1623L7L99Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon |
|
| KST1623L7S62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon |
|
| KST1623L7TI | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
|
| KST1623L7TR | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
|
| KST17D87Z | FAIRCHILD |
获取价格 |
RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN |
|
| KST17L99Z | FAIRCHILD |
获取价格 |
RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN |
|
| KST17S62Z | FAIRCHILD |
获取价格 |
RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN |
|
| KST180S | LIUJING |
获取价格 |
可控硅、晶闸管 |
|
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
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