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KSH45H11TM PDF预览

KSH45H11TM

更新时间: 2024-11-05 20:44:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
6页 166K
描述
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3

KSH45H11TM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.24
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

KSH45H11TM 数据手册

 浏览型号KSH45H11TM的Datasheet PDF文件第2页浏览型号KSH45H11TM的Datasheet PDF文件第3页浏览型号KSH45H11TM的Datasheet PDF文件第4页浏览型号KSH45H11TM的Datasheet PDF文件第5页浏览型号KSH45H11TM的Datasheet PDF文件第6页 
November 2013  
KSH45H11  
PNP Epitaxial Silicon Transistor  
Features  
Description  
• Lead Formed for Surface Mount Application (No Suffix)  
• Straight Lead (I-PAK, “- I” Suffix)  
• Electrically Similar to Popular KSE45H  
• Fast Switching Speeds  
General-purpose power and switching such as output or  
driver stages in applications D-PAK for surface mount  
applications.  
• Low Collector Emitter Saturation Voltage  
Applications  
• Switching Regulators  
• Converters  
• Power Amplifiers  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
Ordering Information  
Part Number  
KSH45H11TF  
KSH45H11TM  
KSH45H11ITU  
Top Mark  
KSH45H11  
KSH45H11  
KSH45H11-I  
Package  
Packing Method  
Tape and Reel  
Tape and Reel  
Rail  
TO-252 3L (DPAK)  
TO-252 3L (DPAK)  
TO-251 3L (IPAK)  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.  
Symbol  
VCEO  
VEBO  
IC  
Parameter  
Value  
-80  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5  
V
Collector Current (DC)  
Collector Current (Pulse)  
-8  
A
ICP  
-16  
A
Collector Dissipation (TC = 25°C)  
Collector Dissipation (TA = 25°C)  
Junction Temperature  
20  
W
W
°C  
°C  
PC  
1.75  
150  
TJ  
TSTG  
Storage Temperature  
-55 to 150  
© 2002 Fairchild Semiconductor Corporation  
KSH45H11 Rev. 1.2.0  
www.fairchildsemi.com  
1

KSH45H11TM 替代型号

型号 品牌 替代类型 描述 数据表
MJD45H11TF FAIRCHILD

类似代替

PNP Epitaxial Silicon Transistor
MJD45H11TM FAIRCHILD

类似代替

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK

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