型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD526_06 | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
KSD526O | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
KSD526-O | SAMSUNG |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
KSD526-O | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
KSD526OTU | FAIRCHILD |
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Transistor, | |
KSD526-R | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
KSD526RJ69Z | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
KSD526Y | ONSEMI |
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NPN外延硅晶体管 | |
KSD526Y | FAIRCHILD |
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NPN Epitaxial Silicon Transistor Power Amplifier Applications | |
KSD526-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |