生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 800 V | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 70 W |
最大功率耗散 (Abs): | 70 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD5086 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5089 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5090 | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5090 | NJSEMI |
获取价格 |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR | |
KSD526 | FAIRCHILD |
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Power Amplifier Applications | |
KSD526 | FOSHAN |
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TO-220 | |
KSD526_06 | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
KSD526O | FAIRCHILD |
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NPN Epitaxial Silicon Transistor | |
KSD526-O | SAMSUNG |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
KSD526-O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |