Datasheet > KSD5079

KSD5079

更新时间： 2022-02-26 12:57:22

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	137K
描述
isc Silicon NPN Power Transistor

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KSD5079 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSD5079

DESCRIPTION

·High Breakdown Voltage-

: V_CBO= 1500V (Min)

·High Switching Speed

·High Reliability

APPLICATIONS

·Designed for color TV horizontal output applicaitions

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

1500

800

UNIT

Collector Current- Continuous

Collector Current-Peak

I_CP

Collector Power Dissipation

P_C

℃

@ T_C=25℃

T_J

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

isc website：www.iscsemi.cn

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