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KSD227-G PDF预览

KSD227-G

更新时间: 2024-09-24 13:09:11
品牌 Logo 应用领域
三星 - SAMSUNG 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
2页 76K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

KSD227-G 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.78
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

KSD227-G 数据手册

 浏览型号KSD227-G的Datasheet PDF文件第2页 

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