Datasheet > KSD1691O(TO-126)

KSD1691O(TO-126)

更新时间： 2024-02-19 09:35:12

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JCST		/
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Transistor

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KSD1691O(TO-126) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

TO-126

KSD1691 TRANSISTOR (NPN)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

Low Collector-Emitter Saturation Voltage & Large Collector

Current

High Power Dissipation: PC = 1.3W (Ta=25°C)

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

P_C

1.3

℃

Collector Power Dissipation (T_a= 25 ℃)

Collector Power Dissipation (T_c= 25 ℃)

Junction Temperature

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA,I_C=0

I_CBO

I_EBO

V_CB=50V,I_E=0

V_EB=7V,I_C=0

μA

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=1V,I_C=2A

V_CE=1V,I_C=0.1A

V_CE=1V,I_C=5A

100

400

DC current gain

Collector-emitter saturation voltage

V_CE(sat)

I_C=2A,I_B=0.2A

0.3

Base-emitter saturation voltage

Turn ON Time

V_BE(sat)

t_on

1.2

V_CC= 10V, I_C= 2A ,

μS

I_B1=-I_B2=0.2A,R_L=5Ω

Storage Time

t_stg

2.5

Fall Time

t_f

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

160-320

200-400

A,Jun,2011

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