Datasheet > KSD1691

KSD1691

更新时间： 2023-12-06 20:02:48

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	659K
描述
TO-126

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数据手册

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KSD1691 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

KSD1691 TRANSISTOR (NPN)

TO – 126

FEATURES

z Low Collector-Emitter Saturation Voltage & Large

Collector Current

1. EMITTER

2. COLLECTOR

3. BASE

z High Power Dissipation: PC = 1.3W (Ta=25°C)

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

D1691,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ

Solid dot= Green molding compound

device, if none, the normal device

//,ꢄode ꢀ

D1691

ꢀ

ORDERING INFORMATION

Part Number

KSD1691

Package

TO-126

Packing Method

Pack Quantity

200pcs/Bag

60pcs/Tube

Bulk

KSD1691-TU

Tube

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

1.3

℃

Collector Power Dissipation (T_a= 25 ℃)

P_C

Collector Power Dissipation (T_c= 25 ℃)

Operation Junction and Storage Temperature Range

T_J,T_stg

-55-150

www.jscj-elec.com

Rev. - 2.1

12 3

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