5秒后页面跳转
KSC2859L99Z PDF预览

KSC2859L99Z

更新时间: 2024-11-05 14:51:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
3页 62K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

KSC2859L99Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

KSC2859L99Z 数据手册

 浏览型号KSC2859L99Z的Datasheet PDF文件第2页浏览型号KSC2859L99Z的Datasheet PDF文件第3页 
KSC2859  
NPN EPITAXIAL SILICON TRANSISTOR  
LOW FREQUENCY POWER AMPLIFIER  
· Complement to KSA1182  
STO-23  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
35  
30  
5
500  
150  
V
V
V
mA  
mW  
°C  
°C  
VCEO  
VEBO  
IC  
PC  
TJ  
150  
-55 ~ 150  
TSTG  
1. Base 2. Emitter 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
ICEO  
Test Conditions  
Min  
Typ  
Max  
Unit  
mA  
mA  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
VCB=35V, IE=0  
VEB=5V, IC=0  
VCE=1V, IC=100mA  
VCE=6V, IC=400mA  
IC=100mA, IB=10mA  
0.1  
0.1  
240  
IEBO  
hFE(1)  
hFE(2)  
VCE (sat)  
VBE (on)  
fT  
70  
25  
V
V
MHz  
pF  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain-Bandwidth Product  
Output Capacitance  
0.25  
1.0  
0.1  
0.8  
300  
7
IC=100mA, VCE=1V  
IC=20mA, VCE=6V  
VCB=6V, IE=0  
COB  
f=1MHz  
hFE CLASSIFICATION  
Classification  
O
Y
hFE(1)  
70-140  
120-240  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

与KSC2859L99Z相关器件

型号 品牌 获取价格 描述 数据表
KSC2859O FAIRCHILD

获取价格

Low Frequency Power Amplifier
KSC2859-O SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KSC2859OL99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
KSC2859OMTF FAIRCHILD

获取价格

Low Frequency Power Amplifier
KSC2859OS62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
KSC2859S62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
KSC2859TF SAMSUNG

获取价格

暂无描述
KSC2859TI SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KSC2859TR SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KSC2859Y FAIRCHILD

获取价格

Low Frequency Power Amplifier