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KSC2787YBU PDF预览

KSC2787YBU

更新时间: 2024-11-05 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管
页数 文件大小 规格书
4页 43K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, TO-92S, 3 PIN

KSC2787YBU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92S包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

KSC2787YBU 数据手册

 浏览型号KSC2787YBU的Datasheet PDF文件第2页浏览型号KSC2787YBU的Datasheet PDF文件第3页浏览型号KSC2787YBU的Datasheet PDF文件第4页 
KSC2787  
FM/AM RF AMP, MIX, CONV, OSC, IF  
Collector-Emitter Voltage : V  
High Current Gain Bandwidth Product : f =300MHz (TYP)  
=30V  
CEO  
T
Low Output Capacitance : C =2.0pF (TYP)  
ob  
TO-92S  
1.Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
30  
V
CEO  
EBO  
5
V
I
50  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
250  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
30  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
I
V
=50V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
=5V, I =0  
C
h
DC Current Gain  
=6V, I =1mA  
40  
240  
0.75  
0.3  
FE  
C
V
V
(on)  
Base-Emitter On Voltage  
=6V, I =1mA  
0.67  
0.08  
300  
2.0  
V
V
BE  
C
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
C B  
CE  
f
V
=6V, I =1mA  
150  
MHz  
pF  
T
CE  
CB  
C
C
V
=6V, I =0, f=1MHz  
2.5  
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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