Datasheet > KSC1730O

KSC1730O

更新时间： 2024-11-06 20:10:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	111K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KSC1730O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

KSC1730O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

KSC1730 TRANSISTOR (NPN)

1.EMITTER

2.COLLECTOR

3.BASE

FEATURES

High Transition Frequency

Low V_CE(sat)

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Units

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

200

R_θJA

T_j

625

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

I_C= 0.01mA,I_E=0

I_C=5mA,I_B=0

Collector-emitter

breakdown

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

I_E=0.01mA,I_C=0

V_CB=12V,I_E=0

0.1

240

0.5

1.5

μA

h_FE

V_CE=10V, I_C=5mA

I_C=10mA,I_B=1mA

V_CB=10V,I_E=0, f=1MHz

VCE=10V,IC= 5mA

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

C_ob

f_T

800

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

40-80

70-140

120-240

A,Dec,2010

中文翻译

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