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KSC1730-Y PDF预览

KSC1730-Y

更新时间: 2024-11-07 01:07:43
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2页 1044K
描述
NPN Transistors

KSC1730-Y 数据手册

 浏览型号KSC1730-Y的Datasheet PDF文件第2页 
DIP Type  
Transistors  
NPN Transistors  
KSC1730-HF  
TO-92  
Unit: mm  
+0.25  
–0.15  
4.58  
Features  
High Current Gain Bandwidth Product : fT=1100MHz  
0.46± 0.10  
Output Capacitance : COB=1.5pF (MAX.)  
PbFree Package May be Available. The GSuffix Denotes a  
PbFree Lead Finish  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
[1.27± 0.20]  
0.38  
1 2 3  
[1.27± 0.20]  
3.60± 0.20  
1. Emitter  
2. Collector  
3. Base  
(R2.29)  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
30  
15  
Collector - Emitter Voltage  
Emitter - Base Voltage  
5
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
50  
mA  
P
C
250  
mW  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
30  
15  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μAI  
Ic= 5 mAI = 0  
= 100μAI  
E= 0  
B
I
E
C= 0  
I
CBO  
EBO  
V
V
CB= 30 V , I  
EB= 5V , I  
E
= 0  
0.1  
0.1  
0.5  
1.2  
240  
1.5  
20  
uA  
V
I
C
=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=10 mA, I  
B=1mA  
V
C
=10 mA, I  
B=1mA  
h
FE  
ob  
c-rbb'  
V
V
V
V
CE= 10V, I  
CB= 10V, I  
CE= 10V, I  
CE= 10V, I  
C
= 5mA  
40  
Collector output capacitance  
Collector-Base Time Constant  
Transition frequency  
C
E= 0,f=1MHz  
pF  
ps  
C
E
= 5mA,f=31.9MHz  
= 5mA  
10  
800 1100  
f
T
C
MHz  
Classification of hfe  
Type  
KSC1730-R  
KSC1730-O  
70-140  
KSC1730-Y  
120-240  
Range  
40-80  
1
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