Datasheet > KSC1730-HF

KSC1730-HF

更新时间： 2024-11-07 01:07:43

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KSC1730-HF 数据手册

DIP Type

Transistors

NPN Transistors

KSC1730-HF

TO-92

Unit: mm

+0.25

–0.15

4.58

■ Features

● High Current Gain Bandwidth Product : fT=1100MHz

0.46± 0.10

● Output Capacitance : C^OB=1.5pF (MAX.)

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

+0.10

–0.05

1.27TYP

[1.27± 0.20]

0.38

1 2 3

[1.27± 0.20]

3.60± 0.20

1. Emitter

2. Collector

3. Base

(R2.29)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

250

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 5 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

CB= 30 V , I

EB= 5V , I

= 0

0.1

0.5

1.2

240

1.5

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=10 mA, I

B=1mA

=10 mA, I

B=1mA

c-rbb'

CE= 10V, I

CB= 10V, I

CE= 10V, I

^CE= 10V, I

= 5mA

Collector output capacitance

Collector-Base Time Constant

Transition frequency

E= 0,f=1MHz

= 5mA,f=31.9MHz

= 5mA

800 1100

MHz

■ Classification of hfe

Type

KSC1730-R

KSC1730-O

70-140

KSC1730-Y

120-240

Range

40-80

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