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KSC1675OBU PDF预览

KSC1675OBU

更新时间: 2024-09-14 23:13:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管放大器
页数 文件大小 规格书
4页 44K
描述
FM/AM RF AMP, MIX, CONV,OSC,IF

KSC1675OBU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):70JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

KSC1675OBU 数据手册

 浏览型号KSC1675OBU的Datasheet PDF文件第2页浏览型号KSC1675OBU的Datasheet PDF文件第3页浏览型号KSC1675OBU的Datasheet PDF文件第4页 
KSC1675  
FM/AM RF AMP, MIX, CONV,OSC,IF  
Collector-Base Voltage : V  
High Current Gain Bandwidth Product : f =300MHz (TYP.)  
Low Collector Capacitance : C =2.0pF (TYP.)  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
=30V  
CEO  
T
OB  
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
30  
V
CEO  
EBO  
5
V
I
50  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
250  
C
TJ  
150  
T
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
30  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
I
V
=50V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
=5V, I =0  
C
h
DC Current Gain  
=6V, I =1mA  
40  
240  
0.75  
0.3  
FE  
C
V
V
(on)  
Base-Emitter On Voltage  
=6V, I =1mA  
0.67  
0.08  
300  
2.0  
V
V
BE  
C
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
C B  
CE  
f
V
=6V, I =1mA  
150  
MHz  
pF  
T
CE  
CB  
C
C
V
=6V, I =0, f=1MHz  
2.5  
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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