Datasheet > KSC1187D27Z

KSC1187D27Z

更新时间： 2024-01-01 10:19:48

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器晶体管
页数	文件大小	规格书
4页	46K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92

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技术参数
数据手册

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KSC1187D27Z 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.84
最大集电极电流 (IC)：	0.03 A	集电极-发射极最大电压：	20 V
配置：	SINGLE	最高频带：	VERY HIGH FREQUENCY BAND
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	700 MHz	Base Number Matches：	1

KSC1187D27Z 数据手册

KSC1187

TV 1st, 2nd Picture IF Amplifier

(Forward AGC)

•

High Current Gain Bandwidth Product : f =700MHz

High Power Gain : G =24dB (TYP.) at f=45MHz

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

°C

Collector Dissipation

Junction Temperature

Storage Temperature

250

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I =10µA, I =0

CBO

CEO

EBO

I =5mA, I =0

C B

I =10µA, I =0

=20V, I =0

0.1

µA

CBO

DC Current Gain

=10V, I =2mA

240

Current Gain Bandwidth Product

Reverse Transfer Capacitance

Power Gain

=10V, I =3mA

400

700

0.6

MHz

=10V, I =0, f=1MHz

=10V, I =3mA

f=45MHz

AGC Voltage

G = 30dB, f=45MHz

4.4

5.2

6.0

AGC

Classification

40 ~ 80

70 ~ 140

120 ~ 240

Rev. A, February 2000

12 3 4

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