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KSC1187-R PDF预览

KSC1187-R

更新时间: 2024-01-25 07:43:43
品牌 Logo 应用领域
三星 - SAMSUNG 放大器电视
页数 文件大小 规格书
2页 75K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN

KSC1187-R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):120
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):700 MHzBase Number Matches:1

KSC1187-R 数据手册

 浏览型号KSC1187-R的Datasheet PDF文件第2页 

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