5秒后页面跳转
KSC1173YJ69Z PDF预览

KSC1173YJ69Z

更新时间: 2024-01-18 12:41:32
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 65K
描述
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC1173YJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

KSC1173YJ69Z 数据手册

 浏览型号KSC1173YJ69Z的Datasheet PDF文件第2页浏览型号KSC1173YJ69Z的Datasheet PDF文件第3页浏览型号KSC1173YJ69Z的Datasheet PDF文件第4页浏览型号KSC1173YJ69Z的Datasheet PDF文件第5页 
KSC1173  
Low Frequency Power Amplifier  
Power Regulator  
Collector Current : I =3A  
C
Collector Dissipation : P =10W (T =25°C)  
C
C
Complement to KSA473  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
BV  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
30  
V
V
CBO  
CEO  
EBO  
BV  
BV  
30  
5
V
I
3
10  
A
C
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I
I
I
= 500µA, I = 0  
30  
30  
5
V
V
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 10mA I = 0  
B
= -1mA, I = 0  
C
I
I
V
V
= 20V, I = 0  
1.0  
1.0  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= 5V, I = 0  
C
h
h
DC Current Gain  
V
V
= 2V, I = 0.5A  
70  
25  
240  
FE1  
FE2  
CE  
CE  
C
= 2V, I = 2.5A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= 2A, I = 0.2A  
0.3  
0.75  
100  
35  
0.8  
1.0  
V
V
CE  
C
B
V
V
V
= 2V, I = 0.5A  
C
BE  
CE  
CE  
CB  
f
Current Gain Base Width Product  
Output Capacitance  
= 2V, I = 0.5A  
MHz  
pF  
T
C
C
= 10V, I =0,  
E
ob  
f = 1MHz  
h
Classification  
FE  
Classification  
O
70 ~ 140  
Y
h
120 ~ 240  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与KSC1173YJ69Z相关器件

型号 品牌 描述 获取价格 数据表
KSC1173YTSTU FAIRCHILD Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

获取价格

KSC1173YTSTUA ONSEMI NPN外延硅晶体管

获取价格

KSC1173YTU FAIRCHILD 暂无描述

获取价格

KSC1173YTU ONSEMI NPN外延硅晶体管

获取价格

KSC1187 FAIRCHILD TV 1st, 2nd Picture IF Amplifier (Forward AGC)

获取价格

KSC1187 SAMSUNG NPN (TV 1ST,2ND PICTURE IF AMPLIFIER)

获取价格