生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 最大集电极电流 (IC): | 0.7 A |
集电极-发射极最大电压: | 140 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
功耗环境最大值: | 0.8 W | 最大功率耗散 (Abs): | 0.8 W |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
VCEsat-Max: | 0.7 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KSC1009YTA | FAIRCHILD |
完全替代 ![]() |
High Voltage Amplifier |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC1009G | FAIRCHILD |
获取价格 |
High Voltage Amplifier |
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KSC1009-G | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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KSC1009GBU | FAIRCHILD |
获取价格 |
High Voltage Amplifier |
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KSC1009GD26Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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KSC1009GD27Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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KSC1009GTA | FAIRCHILD |
获取价格 |
High Voltage Amplifier |
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KSC1009J05Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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KSC1009J18Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
![]() |
KSC1009O | FAIRCHILD |
获取价格 |
High Voltage Amplifier |
![]() |
KSC1009-O | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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