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KSA940 PDF预览

KSA940

更新时间: 2024-10-27 22:26:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管功率放大器局域网
页数 文件大小 规格书
4页 63K
描述
Vertical Deflection Output Power Amplifier

KSA940 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.53
Samacsys Description:Bipolar Transistors - BJT PNP Epitaxial Sil最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHz

KSA940 数据手册

 浏览型号KSA940的Datasheet PDF文件第2页浏览型号KSA940的Datasheet PDF文件第3页浏览型号KSA940的Datasheet PDF文件第4页 
KSA940  
Vertical Deflection Output Power Amplifier  
Complement to KSC2073  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
- 150  
- 150  
- 5  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
CEO  
EBO  
V
I
I
- 1.5  
A
C
Base Current  
- 0.5  
A
B
P
P
Collector Dissipation (T =25°C)  
1.5  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
25  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
- 10  
- 10  
140  
Units  
I
I
V
V
V
= - 120V, I = 0  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
= - 5V, I = 0  
C
h
DC Current Gain  
= - 10V, I = - 500mA  
40  
75  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
= - 500mA, I = - 50mA  
- 1.5  
V
V
CE  
C
B
V
V
V
= - 10V, I = - 500mA  
- 0.65 - 0.75 - 0.85  
BE  
CE  
CE  
CB  
C
f
= - 10V, I = - 500mA  
4
MHz  
pF  
T
C
C
= - 10V, I = 0  
55  
ob  
E
f = 1MHz  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

KSA940 替代型号

型号 品牌 替代类型 描述 数据表
2SA1304 TOSHIBA

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