是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.53 |
Samacsys Description: | Bipolar Transistors - BJT PNP Epitaxial Sil | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 25 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SA1304 | TOSHIBA |
功能相似 |
TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSA940H1TU | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla | |
KSA940H2 | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla | |
KSA940H2TU | ROCHESTER |
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1.5A, 150V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN | |
KSA940H2TU | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla | |
KSA940J69Z | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla | |
KSA940TSTU | FAIRCHILD |
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Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Pla | |
KSA940TU | ROCHESTER |
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1.5A, 150V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN | |
KSA940TU | ONSEMI |
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PNP外延硅晶体管 | |
KSA940TU | FAIRCHILD |
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Vertical Deflection Output Power Amplifier | |
KSA952 | SAMSUNG |
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PNP SILICON TRANSISTOR |