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KSA642YTA PDF预览

KSA642YTA

更新时间: 2024-11-05 23:15:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
4页 40K
描述
Low Frequency Power Amplifier

KSA642YTA 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.48
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

KSA642YTA 数据手册

 浏览型号KSA642YTA的Datasheet PDF文件第2页浏览型号KSA642YTA的Datasheet PDF文件第3页浏览型号KSA642YTA的Datasheet PDF文件第4页 
KSA642  
Low Frequency Power Amplifier  
Complement to KSD227  
Collector Power Dissipation : P = 400mW  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
CBO  
-25  
V
CEO  
EBO  
-5  
V
I
I
Collector Current (DC)  
* Collector Current (Pulse)  
-300  
-500  
400  
mA  
mA  
mW  
°C  
C
CP  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
* PW10ms, Duty cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-30  
-25  
- 5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA. I =0  
C
B
I
= -10µA. I =0  
V
E
C
I
I
V
V
V
= -25V, I =0  
-100  
-100  
400  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
= -3V, I =0  
C
h
* DC Current Gain  
= -1V, I = -50mA  
70  
FE  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
I = -300mA, I = -30mA  
-0.35  
-0.6  
V
CE  
C
B
* Pulse Test: PW350µs, Duty cycle2%  
h
Classification  
FE  
Classification  
O
Y
G
h
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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