是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.48 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.3 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSA643 | FAIRCHILD |
获取价格 |
Low Frequency Power Amplifier | |
KSA643 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSA643 | LGE |
获取价格 |
双极型晶体管 | |
KSA643 | CJ |
获取价格 |
TO-92 | |
KSA643 | FOSHAN |
获取价格 |
TO-92 | |
KSA643CYBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
KSA643CYTA | FAIRCHILD |
获取价格 |
暂无描述 | |
KSA643D26Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSA643D27Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSA643-G | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |