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KSA642Y PDF预览

KSA642Y

更新时间: 2024-11-30 20:27:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ 放大器晶体管
页数 文件大小 规格书
1页 111K
描述
Transistor

KSA642Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

KSA642Y 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
KSA642 TRANSISTOR (PNP)  
1.EMITTER  
2.BASE  
FEATURES  
z
General Purpose Amplifier Transistor  
3.COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
-30  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-25  
V
-5  
V
Collector Current  
-0.3  
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
400  
mW  
/W  
RθJA  
Tj  
312  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
-30  
-25  
-5  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=- 0.1mA,IE=0  
IC=-10mA,IB=0  
IE=-0.01mA,IC=0  
VCB=-25V,IE=0  
V
V
-0.1  
-0.1  
400  
-0.6  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB=-3V,IC=0  
*
DC current gain  
hFE  
VCE=-1V, IC=-50mA  
IC=-0.3A,IB=-30mA  
70  
*
Collector-emitter saturation voltage  
VCE(sat)  
V
*Pulse test: pulse width 350μs, duty cycle2.0%.  
CLASSIFICATION OF hFE  
RANK  
O
Y
G
RANGE  
70-140  
120-240  
200-400  
A,Dec,2010  

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双极型晶体管