Datasheet > KSA642OD27Z

KSA642OD27Z

更新时间： 2024-11-20 21:07:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	73K
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数据手册

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KSA642OD27Z 数据手册

KSA642

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER

· Collector-Base Voltage: V_CBO= -30V

TO-92

· Low Collector-Emitter Saturation Voltage: V_CE(sat)= -0.15V(TYP)

· Complement to KSC184

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

V_CBO

-30

-25

-5

-50

250

150

-55 ~ 150

°C

V_CEO

V_EBO

I_C

P_C

T_J

T_STG

1. Emitter 2. Base 2. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_C= -100mA, I_E=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain-Bandwidth Product

BV_CBO

-30

-25

- 5

I_C= -10mA. I_B=0

I_E= -10mA. I_C=0

V_CB= -25V, I_E=0

V_EB= -3V, I_C=0

V_CE= -6V, I_C= -1mA

I_C= -20mA, I_B= -2mA

V_CE= -6V, I_C= -1mA

V_CB= -6V, I_E= 0

f=1MHz

BV_CEO

BV_EBO

I_CBO

I_EBO

h_FE

V_CE(sat)

V_BE(on)

f_T

-100

400

-0.3

-1.0

MHz

-0.15

-0.65

100

Output Capacitance

C_OB

2.5

h_FECLASSIFICATION

Classification

h_FE

40-80

70-140

120-240

200-400

Rev. B

1999 Fairchild Semiconductor Corporation

12 3

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