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KSA642GD75Z

更新时间: 2024-11-20 21:07:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 73K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA642GD75Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

KSA642GD75Z 数据手册

 浏览型号KSA642GD75Z的Datasheet PDF文件第2页浏览型号KSA642GD75Z的Datasheet PDF文件第3页 
KSA642  
PNP EPITAXIAL SILICON TRANSISTOR  
LOW FREQUENCY AMPLIFIER  
· Collector-Base Voltage: VCBO= -30V  
TO-92  
· Low Collector-Emitter Saturation Voltage: VCE(sat)= -0.15V(TYP)  
· Complement to KSC184  
ABSOLUTE MAXIMUM RATINGS (TA =25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
-30  
-25  
-5  
-50  
250  
150  
-55 ~ 150  
V
V
V
mA  
mW  
°C  
°C  
VCEO  
VEBO  
IC  
PC  
TJ  
TSTG  
1. Emitter 2. Base 2. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
IC= -100mA, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain-Bandwidth Product  
BVCBO  
-30  
-25  
- 5  
V
V
V
nA  
nA  
IC= -10mA. IB=0  
IE = -10mA. IC=0  
VCB= -25V, IE=0  
VEB= -3V, IC=0  
VCE= -6V, IC= -1mA  
IC= -20mA, IB= -2mA  
VCE= -6V, IC= -1mA  
VCE= -6V, IC= -1mA  
VCB= -6V, IE = 0  
f=1MHz  
BVCEO  
BVEBO  
ICBO  
IEBO  
hFE  
VCE (sat)  
VBE (on)  
fT  
-100  
-100  
400  
-0.3  
-1.0  
40  
V
V
MHz  
pF  
-0.15  
-0.65  
100  
Output Capacitance  
COB  
2.5  
hFE CLASSIFICATION  
Classification  
R
O
Y
G
hFE  
40-80  
70-140  
120-240  
200-400  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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