KSA1614

更新时间： 2024-09-27 05:41:03

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	113K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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KSA1614 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

KSA1614

DESCRIPTION

·With TO-220F package

·Collector-base voltage: V_CBO=-80V

·Collector dissipation: P_C=20W(T_C=25℃)

APPLICATIONS

·Power regulator

·Low frequency power amplifier

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-55

Open collector

-5

-3

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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与KSA1614相关器件

型号	品牌	获取价格	描述	数据表
KSA1614O	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSA1614O	ISC	获取价格	Transistor
KSA1614R	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSA1614-R	SAMSUNG	获取价格	Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSA1614Y	ISC	获取价格	暂无描述
KSA1614Y	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSA1614-Y	SAMSUNG	获取价格	Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSA1614YTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSA1625	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
KSA1625	FAIRCHILD	获取价格	High Voltage Switch