Datasheet > KSA1203_05

KSA1203_05

更新时间： 2024-09-23 03:48:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	427K
描述
PNP Epitaxial Silicon Transistor

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KSA1203_05 数据手册

July 2005

KSA1203

PNP Epitaxial Silicon Transistor

Low Frequency Power Amplifier

•

3W Output application

Collector Power Dissipation P_C=1~2W : Mounted on Ceramic Board

Complement to KSC2883

Marking

1 2

P Y

0 3

W W

SOT-89

1. Base 2. Collector 3. Emitter

Weekly code

Year code

h_FEgrage

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Ratings

-30

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_EBO

I_C

-30

-5

-1.5

I_B

Base Current

-0.3

P_C

P_C*

Collector Power Dissipation

500

1,000

T_J

Junction Temperature

Storage Temperature

150

°C

T_STG

-55 ~ 150

* Mounted on Ceramic Board (250mm²× 0.8mm)

Electrical Characteristics T_a= 25°C unless otherwise noted

Symbol

BV_CEO

BV_EBO

I_CBO

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I_C= -10mA, I_B= 0

-30

I_E= -1mA, I_C= 0

-5

V_CB= -30V, I_E= 0

-100

320

-2.0

-1.0

I_EBO

Emitter Cut-off Current

V_BE= -5V, I_C= 0

h_FE

DC Current Gain

V_CE= -2V, I_C= -500mA

I_C= -1.5A, I_B= -30mA

V_CE= -2V, I_C= -500mA

100

_CE(sat)

_BE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

f_T

Current Gain Bandwidth Product

Output Capacitance

120

MHz

C_ob

V_CB= -10V, I_E= 0, f = 1MHz

KSA1203 Rev. B3

www.fairchildsemi.com

12 3 4 5

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