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KSA1174ETA PDF预览

KSA1174ETA

更新时间: 2024-11-08 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管放大器
页数 文件大小 规格书
5页 47K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN

KSA1174ETA 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92S包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):400JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

KSA1174ETA 数据手册

 浏览型号KSA1174ETA的Datasheet PDF文件第2页浏览型号KSA1174ETA的Datasheet PDF文件第3页浏览型号KSA1174ETA的Datasheet PDF文件第4页浏览型号KSA1174ETA的Datasheet PDF文件第5页 
KSA1174  
Audio Frequency Low Noise Amplifier  
Complement to KSC2784  
TO-92S  
1.Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-120  
-120  
-5  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
V
CEO  
EBO  
V
I
I
-50  
mA  
mA  
mW  
°C  
C
Base Current  
-10  
B
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-50  
-1  
Units  
I
I
I
V
V
V
= -120V, I =0  
nA  
µA  
nA  
CBO  
CEO  
EBO  
CB  
CE  
EB  
E
= -100V, I =0  
B
= -5V, I = 0  
-50  
C
h
h
V
V
= -6V, I = -0.1mA  
150  
200  
500  
500  
FE1  
FE2  
CE  
CE  
C
= -6V, I = -1mA  
800  
-0.65  
-0.3  
C
V
V
(on)  
Base-Emitter On Voltage  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
= -6V, I = -1mA  
-0.55  
-0.61  
-0.09  
100  
2
V
V
BE  
CE  
C
(sat)  
I = -10mA, I = -1mA  
C B  
CE  
f
V
= -6V, I = -1mA  
50  
MHz  
pF  
T
CE  
CB  
C
C
V
= -30V, I = 0, f=1MHz  
3
ob  
E
NV  
Noise Voltage  
25  
40  
mV  
h
Classification  
FE2  
Classification  
P
F
E
h
200 ~ 400  
300 ~ 600  
400 ~ 800  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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