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KSA1156YS PDF预览

KSA1156YS

更新时间： 2024-11-11 11:12:51
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 220K
描述
PNP硅晶体管

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中文翻译

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KSA1156YS 技术参数

是否无铅：不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：6 weeks风险等级：1.12
Is Samacsys：N最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：100JEDEC-95代码：TO-126
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：10 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：5000 ns最大开启时间（吨）：1000 ns
Base Number Matches：1

KSA1156YS 数据手册

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与KSA1156YS相关器件

型号 品牌 获取价格 描述 数据表
KSA1156YS_NL FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1156YSTSTU FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1174 SAMSUNG

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 		PNP (AUDIO FREQUENCY LOW NOISE AMPLIFIER)
KSA1174 FAIRCHILD

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 		PNP Epitaxial Silicon Transistor
KSA1174E FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA1174-E SAMSUNG

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA1174EBU FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA1174ETA FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA1174F FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA1174-F SAMSUNG

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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