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KSA1156OSTU PDF预览

KSA1156OSTU

更新时间： 2024-11-09 11:12:51
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 220K
描述
PNP硅晶体管

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中文翻译

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KSA1156OSTU 技术参数

是否无铅：不含铅生命周期：End Of Life
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：1 week
风险等级：5.44Is Samacsys：N
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：60
JEDEC-95代码：TO-126JESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：10 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：5000 ns
最大开启时间（吨）：1000 nsBase Number Matches：1

KSA1156OSTU 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
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与KSA1156OSTU相关器件

型号 品牌 获取价格 描述 数据表
KSA1156-R SAMSUNG

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1156Y FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1156-Y SAMSUNG

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1156YS FAIRCHILD

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 		PNP Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK
KSA1156YS ONSEMI

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 		PNP硅晶体管
KSA1156YS_NL FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1156YSTSTU FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126
KSA1174 SAMSUNG

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 		PNP (AUDIO FREQUENCY LOW NOISE AMPLIFIER)
KSA1174 FAIRCHILD

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 		PNP Epitaxial Silicon Transistor
KSA1174E FAIRCHILD

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 		Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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