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KS883C02 PDF预览

KS883C02

更新时间: 2024-11-14 11:31:39
品牌 Logo 应用领域
富士电机 - FUJI 整流二极管肖特基二极管
页数 文件大小 规格书
3页 59K
描述
SCHOTTKY BARRIER DIODE

KS883C02 技术参数

生命周期:Active包装说明:SURFACE MOUNT PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75Is Samacsys:N
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.39 VJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:60 A元件数量:2
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:7 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLEBase Number Matches:1

KS883C02 数据手册

 浏览型号KS883C02的Datasheet PDF文件第2页浏览型号KS883C02的Datasheet PDF文件第3页 
(20V / 7A )  
KS883C02 (7A)  
Outline drawings, mm  
SCHOTTKY BARRIER DIODE  
2.3±0.2  
0.5  
6.5±0.2  
5±0.2  
0.9 +00.2.1  
0
4.6  
Features  
Surface mount device  
JEDEC  
EIAJ  
Low VF  
Super high speed switching  
Connection diagram  
High reliability by planer design  
Applications  
High speed power switching  
2
4
1
3
Maximum ratings and characteristics  
Absolute maximum ratings  
Symbol  
VRRM  
VRSM  
Io  
Conditions  
Item  
Rating  
Unit  
V
20  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
Average output current  
Surge current  
20  
tw=500ns, duty=1/40  
V
Square wave, duty=1/2  
Tc=89°C  
7.0*  
A
Sine wave  
10ms  
IFSM  
Tj  
60  
A
Operating junction temperature  
Storage temperature  
-40 to +125  
-40 to +125  
°C  
°C  
Tstg  
* Average forward current of centertap full wave connection  
Electrical characteristics (Ta=25°C Unless otherwise specified )  
Item  
Unit  
V
Symbol  
VFM  
Max.  
0.39  
10.0  
10.0  
Conditions  
IFM=2.5A  
Forward voltage drop  
Reverse current  
VR=VRRM  
mA  
°C/W  
IRRM  
Junction to case  
Thermal resistance  
Rth(j-c)  

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