Datasheet > KS600-65

KS600-65

更新时间： 2024-04-09 18:59:46

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	251K
描述
TS10C

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KS600-65 数据手册

KS600-Bidirectional thyristor

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

5800 - 6500 V_DRM

************************************************************************************************************************************

HIGH POWER BIDIRECTIONAL THYRISTOR

TS10C

Features：

. Amplifying Gate Configuration

. Two thyristors integrated into one wafer

. Blocking capability up to 6500 volts

. High power capability

. Full cold pressing encapsulation

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking-Off State

(1)

Device No.

KS600/58

KS600/62

KS600/65

DRM

DSM

Notes：

4900

5300

5600

5800

6200

6500

All ratings are specified for Tj=25 ^oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range-40 ^oC to +125 ^o

(2) 10 msec. Max. Pulse width

(3) Maximum value for Tj=125 ^oC；50Hz.

(4) Minimum value for linear and exponential

waveshape to 67% rated V_DRM.Gate open,

Tj=125 ^oC

V_DRM= Repetitive peak off state voltage

V_DSM= Non Repetitive peak reverse voltage(2)

Repetitive peak reverse leakage

I_DRM

5 mA

150 mA (3)

and off state leakage

(5) The value of di/dt is established in accordance

with EIA/NIMA Standard JB/T 8950.2-2013.

dv/dt(4)

2000 V/μs

Off - state voltage rise rating

Conducting-on state

Parameter

Symbol

Min.

Max.

Typ.

Units Conditions

Average value of on-state current

RMS value of on-state current

I_T(AV)

I_TRMS

I_TSM

I²t

600

960

Sinewave,180^oconduction,T_c=70^oC

Nominal value

Peak one cycle surge

(non repetitive) current

10.0 msec (50Hz), sinusoidal wave-

shape, 180^oconduction, T_j= 125 ^oC

7200

2.6x10⁵

700

I square t

A²s

10 msec

Latching current

Holding current

Peak on-state voltage

Threshold Voltage

Slope resistance

I_L

V_D= 12 V; R_L= 12 ohms

V_{D =}12 V; I = 2.5 A

I_TM=1000A;Tj =25^oC

Tj=125^oC

I_H

200

V_TM

V_TO

r_T

2.5

1.3

1.2

mΩ

500A to 1500A

repetition

Critical rate of rise of on-state

current(5)

Critical rate of rise of commutating

voltage

di/dt

100



500

Tj=125^oC；VR≤0.67V_DRM

dv/dt

com

http://www.chinarunau.com

Page 1 of 3

12 3

下载PDF

与KS600-65相关器件

型号	品牌	描述	获取价格	数据表
KS600A500-1800V Y35KSE	LIUJING	可控硅、晶闸管	获取价格
KS6027	SAMSUNG	Consumer Circuit, CMOS	获取价格
KS602J2	LITTELFUSE	Littelfuse标准精密度可互换热敏电阻是极为精确、稳定的低成本装置，专为温度传感和控	获取价格
KS6034	SAMSUNG	Consumer Circuit, CMOS	获取价格
KS6034C	SAMSUNG	Microprocessor Circuit, CMOS	获取价格
KS6035	SAMSUNG	Consumer Circuit, CMOS	获取价格