Datasheet > KS250-45

KS250-45

更新时间： 2024-04-09 19:02:52

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扬杰 - YANGJIE		/
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3页	224K
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TS5D

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KS250-45 数据手册

KS250-Bidirectional thyristor

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

4000 - 4500 V_DRM

************************************************************************************************************************************

HIGH POWER BIDIRECTIONAL THYRISTOR

TS5D

Features：

. Amplifying Gate Configuration

. Two thyristors integrated into one wafer

. Blocking capability up to 4500 volts

. High power capability

. Full cold pressing encapsulation

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking-Off State

(1)

Device No.

KS250/40

KS250/42

KS250/45

DRM

DSM

Notes：

4000

4200

4500

4100

4300

4600

All ratings are specified for Tj=25 ^oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range-40 ^oC to +125 ^o

(2) 10 msec. Max. Pulse width

V_DRM= Repetitive peak off state voltage

V_DSM= Non Repetitive peak reverse voltage(2)

(3) Maximum value for Tj=125 ^oC；5Hz.

(4) Minimum value for linear and exponential

waveshape to 67% rated V_DRM.Gate open,

Repetitive peak reverse leakage

I_DRM

2 mA

60 mA (3)

Tj=125 ^o

and off state leakage

(5) The value of di/dt is established in accordance

with EIA/NIMA Standard JB/T 8950.2-2013.

dv/dt(4)

1000 V/μs

Off - state voltage rise rating

Conducting-on state

Parameter

Symbol

Min.

Max.

Typ.

Units Conditions

Average value of on-state current

RMS value of on-state current

I_T(AV)

I_TRMS

I_TSM

I²t

Sinewave,180^oconduction,T_c=70^oC

Nominal value

250

390

Peak one cycle surge

(non repetitive) current

10.0 msec (50Hz), sinusoidal wave-

shape, 180^oconduction, T_j= 125 ^oC

3000

45x10³

700

I square t

A²s

10 msec

Latching current

Holding current

Peak on-state voltage

Threshold Voltage

Slope resistance

I_L

V_D= 12 V; R_L= 12 ohms

V_{D =}12 V; I = 2.5 A

I_TM=500A;Tj =25^oC

Tj=125^oC

I_H

200

V_TM

V_TO

r_T

2.3

1.5

mΩ

300A to 1000A

repetition

1.6

Critical rate of rise of on-state

current(5)

Critical rate of rise of commutating

voltage

di/dt

100



500

Tj=125^oC；VR≤0.67V_DRM

dv/dt

com

http://www.chinarunau.com

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