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KS135-85 PDF预览

KS135-85

更新时间: 2024-04-09 18:58:51
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扬杰 - YANGJIE /
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3页 224K
描述
TS5D

KS135-85 数据手册

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KS135-Bidirectional thyristor  
Jiangsu Yangjie Runau Semiconductor Co.,Ltd  
7400 - 8500 VDRM  
************************************************************************************************************************************  
HIGH POWER BIDIRECTIONAL THYRISTOR  
TS5D  
Features  
. Amplifying Gate Configuration  
. Two thyristors integrated into one wafer  
. Blocking capability up to 8500 volts  
. High power capability  
. Full cold pressing encapsulation  
ELECTRICAL CHARACTERISTICS AND RATINGS  
Blocking-Off State  
V
(1)  
V
(1)  
Device No.  
KS135/74  
KS135/78  
KS135/82  
KS135/85  
DRM  
DSM  
Notes  
6500  
6900  
7300  
7600  
7400  
7800  
8200  
8500  
All ratings are specified for Tj=25 oC unless  
otherwise stated.  
(1) All voltage ratings are specified for an applied  
50Hz/60zHz sinusoidal waveform over the  
temperature range-40 oC to +110 o  
(2) 10 msec. Max. Pulse width  
C
(3) Maximum value for Tj=110 oC50Hz.  
(4) Minimum value for linear and exponential  
waveshape to 67% rated VDRM. Gate open,  
VDRM = Repetitive peak off state voltage  
VDSM = Non Repetitive peak reverse voltage(2)  
Tj=110 o  
C
(5) The value of di/dt is established in accordance  
with EIA/NIMA Standard JB/T 8950.2-2013.  
Repetitive peak reverse leakage  
IDRM  
2 mA  
100 mA (3)  
and off state leakage  
dv/dt(4)  
1000 V/μs  
Off - state voltage rise rating  
Conducting-on state  
Parameter  
Symbol  
IT(AV)  
ITRMS  
ITSM  
I2t  
Min.  
Max.  
135  
Typ.  
Units Conditions  
Average value of on-state current  
RMS value of on-state current  
A
A
Sinewave,180o conduction,Tc=70oC  
Nominal value  
212  
Peak one cycle surge  
(non repetitive) current  
10.0 msec (50Hz), sinusoidal wave-  
shape, 180o conduction, Tj = 110 oC  
1485  
11x103  
700  
A
I square t  
A2s  
mA  
mA  
V
10 msec  
Latching current  
Holding current  
Peak on-state voltage  
Threshold Voltage  
Slope resistance  
IL  
VD = 12 V; RL= 12 ohms  
VD = 12 V; I = 2.5 A  
ITM=300A;Tj =25oC  
Tj=110oC  
IH  
200  
VTM  
VTO  
rT  
3.5  
2.36  
3.8  
V
mΩ  
200A to 500A  
Critical rate of rise of on-state  
current(5)  
Critical rate of rise of commutating  
voltage  
di/dt  
100  
A/  
A/  
s
repetition  
500  
Tj=110oCVR0.67VDRM  
s
dv/dt  
com  
http://www.chinarunau.com  
Page 1 of 3  

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