Datasheet > KRF7325

KRF7325

更新时间： 2024-11-17 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	67K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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KRF7325 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7325

Features

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Low Profile (<1.8mm)

Available in Tape & Reel

1: Source 1

2: Gate 1

3: Source 2

4: Gate 2

7,8: Drain 1

5,6: Drain 2

Absolute Maximum Ratings Ta = 25

Parameter

Drain- Source Voltage

Symbol

V^DS

Rating

-12

Unit

-7.8

Continuous Drain Current, V^GS@ -4.5V @ Ta = 25

Continuous Drain Current, V^GS@ -4.5V @ Ta = 70

Pulsed Drain Current *1

-6.2

I^DM

-39

2.0

Power Dissipation *2

Linear Derating Factor

Gate-to-Source Voltage

@T^a= 25

@T^a= 70

1.3

VGS

8.0

Junction and Storage Temperature Range

Junction-to-Drain Lead

T^J, TSTG

-55 to + 150

Maximum Junction-to-Ambient *2

62.5

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 When mounted on 1 inch square copper board.

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