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KRC846T

更新时间: 2024-11-16 22:47:31
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
5页 72K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC846T 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.55
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

KRC846T 数据手册

 浏览型号KRC846T的Datasheet PDF文件第2页浏览型号KRC846T的Datasheet PDF文件第3页浏览型号KRC846T的Datasheet PDF文件第4页浏览型号KRC846T的Datasheet PDF文件第5页 
SEMICONDUCTOR  
KRC841T~KRC846T  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
HIGH CURRENT SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.  
E
K
1
B
K
6
FEATURES  
DIM MILLIMETERS  
_
With Built-in Bias Resistors.  
Simplify Circuit Design.  
A
B
C
D
E
2.9+0.2  
1.6+0.2/-0.1  
_
0.70+0.05  
_
+
0.4 0.1  
2
5
Reduce a Quantity of Parts and Manufacturing Process.  
High Output Current : 800mA.  
2.8+0.2/-0.3  
_
1.9+0.2  
F
G
H
I
3
4
0.95  
_
0.16+0.05  
0.00-0.10  
0.25+0.25/-0.15  
0.60  
J
K
L
0.55  
I
H
J
J
EQUIVALENT CIRCUIT  
TYPE NO.  
KRC841T  
KRC842T  
KRC843T  
KRC844T  
KRC845T  
KRC846T  
R1 (k  
1
)
R2 (k  
1
)
OUT  
1. Q COMMON (EMITTER)  
1
2. Q IN (BASE)  
1
3. Q OUT (COLLECTOR)  
2
4. Q COMMON (EMITTER)  
2
R1  
2.2  
4.7  
10  
2.2  
4.7  
10  
5. Q IN (BASE)  
2
6. Q OUT (COLLECTOR)  
1
IN  
R2  
TS6  
1
10  
COMMON  
2.2  
10  
EQUIVALENT CIRCUIT (TOP VIEW)  
6
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
50  
UNIT  
V
Output Voltage  
KRC841T~846T  
KRC841T  
KRC842T  
KRC843T  
KRC844T  
KRC845T  
KRC846T  
10, -10  
12, -10  
20, -10  
30, -10  
10, -5  
12, -6  
800  
VI  
Input Voltage  
V
IO  
PD *  
Tj  
Output Current  
mA  
W
Power Dissipation  
Junction Temperature  
0.9  
KRC841T~846T  
150  
Tstg  
Storage Temperature Range  
-55 150  
* Package mounted on a ceramic board (600  
0.8  
)
Marking  
6
5
4
Lot No.  
MARK SPEC  
TYPE  
KRC841T KRC842T KRC843T KRC844T KRC845T KRC846T  
NA NB NC ND NE NF  
Type Name  
MARK  
1
2
3
2002. 7. 10  
Revision No : 2  
1/5  

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