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KRC659U

更新时间: 2024-11-08 22:47:31
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KEC 晶体开关晶体管驱动局域网
页数 文件大小 规格书
4页 92K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC659U 数据手册

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SEMICONDUCTOR  
KRC657U~KRC659U  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
5
4
DIM MILLIMETERS  
_
A
A1  
B
2.00+0.20  
_
1.3+0.1  
_
2.1+0.1  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
D
T
_
B1  
C
1.25+0.1  
0.65  
0.2+0.10/-0.05  
0-0.1  
D
G
_
H
T
0.9+0.1  
0.15+0.1/-0.05  
EQUIVALENT CIRCUIT  
OUT  
BIAS RESISTOR VALUES  
G
TYPE NO.  
KRC657U  
KRC658U  
KRC659U  
R1(k) R2(k)  
10  
22  
47  
47  
47  
22  
1. Q IN (BASE)  
2. Q , Q COMMON (EMITTER)  
3. Q IN (BASE)  
4. Q OUT (COLLECTOR)  
2
1
R1  
IN  
1
2
2
R2  
5. Q OUT (COLLECTOR)  
1
COMMON(+)  
USV  
EQUIVALENT CIRCUIT (TOP VIEW)  
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
50  
UNIT  
V
Output Voltage  
KRC657U659U  
KRC657U  
30, -6  
40, -7  
40,-15  
100  
VI  
Input Voltage  
KRC658U  
V
KRC659U  
IO  
PD *  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
Junction Temperature  
200  
KRC657U659U  
150  
Tstg  
Storage Temperature Range  
* Total Rating.  
-55150  
Marking  
Type Name  
5
4
MARK SPEC  
TYPE  
KRC657U  
NH  
KRC658U  
NI  
KRC659U  
NJ  
MARK  
1
2
3
2002. 1. 24  
Revision No : 2  
1/4  

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