Datasheet > KRC659E

KRC659E

更新时间： 2024-11-08 22:47:31

品牌	Logo	应用领域
KEC		晶体开关晶体管驱动局域网
页数	文件大小	规格书
4页	92K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

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中文翻译

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数据手册

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KRC659E 数据手册

SEMICONDUCTOR

KRC657E~KRC659E

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

ᴌWith Built-in Bias Resistors.

ᴌSimplify Circuit Design.

DIM MILLIMETERS

1.6+0.05

ᴌReduce a Quantity of Parts and Manufacturing Process.

ᴌHigh Packing Density.

1.0+0.05

1.6+0.05

1.2 0.05

0.50

0.2+0.05

0.5 0.05

0.12 0.05

EQUIVALENT CIRCUIT

OUT

BIAS RESISTOR VALUES

TYPE NO.

KRC657E

KRC658E

KRC659E

R1(kή) R2(kή)

1. Q IN (BASE)

2. Q , Q COMMON (EMITTER)

3. Q IN (BASE)

4. Q OUT (COLLECTOR)

5. Q OUT (COLLECTOR)

COMMON

TESV

EQUIVALENT CIRCUIT (TOP VIEW)

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_O

RATING

UNIT

Output Voltage

Input Voltage

KRC657Eᴕ659E

KRC657E

30, -6

40, -7

40,-15

100

V_I

KRC658E

KRC659E

I_O

P_D*

T_j

Output Current

ᴱ

Power Dissipation

Junction Temperature

200

KRC657Eᴕ659E

150

T_stg

Storage Temperature Range

* Total Rating.

-55ᴕ150

ᴱ

Marking

Type Name

MARK SPEC

TYPE

KRC657E

KRC658E

KRC659E

MARK

2002. 1. 24

Revision No : 1

1/4

12 3 4

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