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KRC658E

更新时间: 2024-11-08 22:47:31
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
4页 92K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC658E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:5Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.78
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 2.136
最大集电极电流 (IC):0.1 A配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F5
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

KRC658E 数据手册

 浏览型号KRC658E的Datasheet PDF文件第2页浏览型号KRC658E的Datasheet PDF文件第3页浏览型号KRC658E的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KRC657E~KRC659E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
5
4
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
1.0+0.05  
_
1.6+0.05  
_
+
B1  
C
1.2 0.05  
0.50  
_
D
H
J
0.2+0.05  
_
+
0.5 0.05  
_
+
0.12 0.05  
P
P
EQUIVALENT CIRCUIT  
OUT  
BIAS RESISTOR VALUES  
P
5
TYPE NO.  
KRC657E  
KRC658E  
KRC659E  
R1(k) R2(k)  
10  
22  
47  
47  
47  
22  
R1  
IN  
1. Q IN (BASE)  
2. Q , Q COMMON (EMITTER)  
3. Q IN (BASE)  
4. Q OUT (COLLECTOR)  
1
1
2
R2  
2
2
5. Q OUT (COLLECTOR)  
1
COMMON  
TESV  
EQUIVALENT CIRCUIT (TOP VIEW)  
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
50  
UNIT  
V
Output Voltage  
Input Voltage  
KRC657E659E  
KRC657E  
30, -6  
40, -7  
40,-15  
100  
VI  
KRC658E  
V
KRC659E  
IO  
PD *  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
Junction Temperature  
200  
KRC657E659E  
150  
Tstg  
Storage Temperature Range  
* Total Rating.  
-55150  
Marking  
Type Name  
5
4
MARK SPEC  
TYPE  
KRC657E  
NH  
KRC658E  
NI  
KRC659E  
NJ  
MARK  
1
2
3
2002. 1. 24  
Revision No : 1  
1/4  

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