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KRA316_02 PDF预览

KRA316_02

更新时间: 2024-11-19 11:31:27
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
6页 71K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KRA316_02 数据手册

 浏览型号KRA316_02的Datasheet PDF文件第2页浏览型号KRA316_02的Datasheet PDF文件第3页浏览型号KRA316_02的Datasheet PDF文件第4页浏览型号KRA316_02的Datasheet PDF文件第5页浏览型号KRA316_02的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KRA316E~KRA322E  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
E
B
FEATURES  
MILLIMETERS  
_
DIM  
A
With Built-in Bias Resistors.  
Simplify Circuit Design.  
+
1.60 0.10  
D
_
+
0.85 0.10  
2
1
B
_
+
0.70 0.10  
C
D
E
Reduce a Quantity of Parts and Manufacturing Process.  
3
0.27+0.10/-0.05  
_
+
1.60 0.10  
_
+
1.00 0.10  
G
H
0.50  
_
0.13+0.05  
J
EQUIVALENT CIRCUIT  
J
TYPE NO.  
KRA316E  
KRA317E  
KRA318E  
KRA319E  
KRA320E  
KRA321E  
KRA322E  
R1(k  
1
)
R2(k  
10  
)
OUT  
1. EMITTER  
2. BASE  
R1  
2.2  
2.2  
4.7  
10  
2.2  
10  
IN  
R2  
3. COLLECTOR  
10  
4.7  
10  
COMMON(+)  
47  
ESM  
100  
100  
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
Output Voltage  
V
KRA316E 322E  
KRA316E  
KRA317E  
KRA318E  
KRA319E  
KRA320E  
KRA321E  
KRA322E  
-10, 5  
-12, 10  
-12, 5  
-20, 7  
-30, 10  
-40, 15  
-40, 10  
-100  
VI  
Input Voltage  
V
IO  
PD  
Tj  
Output Current  
mA  
Power Dissipation  
Junction Temperature  
100  
mW  
KRA316E 322E  
150  
Tstg  
Storage Temperature Range  
-55 150  
Marking  
Type Name  
MARK SPEC  
TYPE KRA316E KRA317E KRA318E KRA319E KRA320E KRA321E KRA322E  
MARK  
P2  
P4  
P5  
P6  
P7  
P8  
P9  
2002. 7. 9  
Revision No : 1  
1/6  

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