Datasheet > KQD5P10

KQD5P10

更新时间： 2024-11-17 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	64K
描述
100V P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KQD5P10 数据手册

SMD Type

TransistIoCrs

100V P-Channel MOSFET

KQD5P10

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

Features

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

-3.6A, -100V, RDS(on) = 1.05 @VGS = -10 V

Low gate charge ( typical 6.3 nC)

Low Crss ( typical 18 pF)

Fast switching

0.127

max

+0.1

0.80

-0.1

100% avalanche tested

Improved dv/dt capability

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DSS

Rating

-100

-3.6

-2.28

-14.4

Unit

Drain to Source Voltage

Drain Current Continuous (T^C=25

Drain Current Continuous (T^C=100

Drain Current Pulsed *1

)

I^D

)

I^DM

V^GSS

E^AS

I^AR

Gate-Source Voltage

Single Pulsed Avalanche Energy*2

Avalanche Current *1

-3.6

2.5

Repetitive Avalanche Energy *1

Peak Diode Recovery dv/dt *3

Power dissipation @ TA=25

Power dissipation @ T^C=25

E^AR

d^v/dt

V/ns

-6

2.5

0.2

Derate above 25

Operating and Storage Temperature

TJ, TSTG

T^L

-55 to150

Maximum lead temperature for soldering

purposes,1/8" from case for 5 seconds

300

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient *4

Thermal Resistance Junction to Ambient

110

*1 Repetitive Rating:Pulse width limited by maximum junction temperature

*2 l= 6.4 mH,I^AS=-3.6A,VDD=-25V,RG=25 ,Startion TJ=25

*3 ISD -4.5A,di/dt 300A/ S,VDD BVDSS,Startiong TJ=25

*4 When mounted on the minimum pad size recommended (PCB Mount)

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