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KPM8N60F PDF预览

KPM8N60F

更新时间: 2024-11-21 17:15:39
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
6页 515K
描述
TO-220IS(1)

KPM8N60F 数据手册

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KPM8N60F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
C
A
This Super Junction MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge, low EMI  
characteristics and excellent avalanche characteristics. It is mainly  
suitable for active power factor correction and switching mode power  
supplies.  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
_
2.54 0.2  
+
_
0.8 0.1  
+
_
+
3.18  
0.1  
FEATURES  
_
3.3 0.1  
+
F
_
12.57 0.2  
+
G
H
J
· VDSS=600V, ID=8A  
· Drain-Source ON Resistance :  
RDS(ON)(Max)=0.58@VGS=10V  
· Qg(typ.)=16nC  
L
M
_
0.5 0.1  
+
R
_
13.0 0.5  
+
_
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
_
6.68 0.2  
+
MAXIMUM RATING (Tc=25)  
_
4.7  
+
_
0.2  
1. GATE  
2. DRAIN  
3. SOURCE  
2.76 0.2  
+
1
2
3
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
* Single Gauge Lead Frame  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
600  
±30  
8*  
V
V
TO-220IS (1)  
ID  
Drain Current  
@TC=100℃  
5*  
A
IDP  
Pulsed (Note1)  
16*  
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
139  
3.9  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
39.1  
0.31  
W
W/℃  
Tc=25℃  
Drain Power  
Dissipation  
PD  
Derate above 25℃  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
Thermal Characteristics  
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
3.2  
/W  
/W  
Thermal Resistance,  
Junction-to-Ambient  
62.5  
* : Drain current limited by maximum junction temperature.  
PIN CONNECTION  
D
G
S
2019. 07. 23  
Revision No : 1  
1/6  

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