Datasheet > KPM8N60D

KPM8N60D

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	925K
描述
DPAK(1)

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KPM8N60D 数据手册

KPM8N60D

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Super Junction MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge, low EMI

characteristics and excellent avalanche characteristics. It is mainly

suitable for active power factor correction and switching mode power

supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

2.30+0.10

0.96 MAX

0.90 MAX

1.80+0.20

0.76+0.20

FEATURES

2.30+0.10

0.50 + 0.10

•

V_DSS=600V, I_D=8A

0.50+0.10

•

0.70 MIN

2.4 0.2

Drain-Source ON Resistance :

R_DS(ON)(Max)=0.58Ω

5.0 0.2

1.75 0.3

5.0 0.3

•

@V_GS=10V Qg(typ.)= 16nC

5.34 0.3

0.27 0.05

0.77 0.1

2.0 0.1

MAXIMUM RATING (Tc=25

)

℃

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

SYMBOL

RATING

UNIT

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

600

± 30

DPAK (1)

@T =25

℃

I_D

Drain Current

@T_C=100℃

I_DP

Pulsed (Note1)

16*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

139

3.9

4.5

DIM

MILLIMETERS

Repetitive Avalanche Energy

(Note 1)

6.60+0.1

E_AR

6.1+0.1

5.33 0.2

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

1.1 0.2

2.90 REF

2.286 0.1

56.8

0.45

150

Tc=25

℃

Drain Power

Dissipation

P_D

0.9 Max.

2.3 0.1

Derate above 25

℃

5.25 Min

T_j

Maximum Junction Temperature

Storage Temperature Range

Thermal Characteristics

℃

0.5+0.1

4.70 Min

0.508 BSC

0.75 Max

T_stg

-55 150

℃

∼

1.5 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.2

℃

1. GATE

2. DRAIN

3. SOURCE

Thermal Resistance,

Junction-to-Ambient

110

* : Drain current limited by maximum junction temperature.

DPAK (3)

PIN CONNECTION

2022. 03. 30

Revision No : 4

1/6

12 3 4 5 6

中文翻译

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