KPM20N60FW
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge, low EMI
characteristics and excellent avalanche characteristics. It is mainly
suitable for active power factor correction and switching mode power
supplies.
A
Q
C
E
F
O
DIM MILLIMETERS
B
_
A
B
C
D
E
11.00
15.87
2.54
0.80
3.18
3.30
+
0.3
0.3
0.2
0.1
0.2
0.2
_
+
FEATURES
_
+
M
_
+
· VDSS=600V, ID=20A
· Drain-Source ON Resistance :
RDS(ON)(Max)=0.19Ω @VGS=10V
· Qg(typ.)= 46nC
L
K
_
+
G
R
_
F
+
D
G
H
J
K
L
M
N
O
Q
R
3.00 Min.
J
_
0.5
13.0
2.00
1.10
1.20
4.25
6.70
4.7
+
0.1
0.5
0.25
0.2
0.2
0.3
0.3
0.2
0.2
_
+
_
+
_
+
MAXIMUM RATING (Tc=25℃)
_
N
H
+
1
2
3
_
+
1. GATE
2. DRAIN
_
+
CHARACTERISTIC
SYMBOL
RATING
UNIT
_
+
3. SOURCE
_
+
2.76
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TC=25℃
600
±30
20*
V
V
TO-220ISW
ID
Drain Current
TC=100℃
12.6*
50*
A
IDP
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
EAS
464
7.2
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
59.5
0.48
W
W/℃
℃
Tc=25℃
Drain Power
Dissipation
PD
Derate above 25℃
Tj
Maximum Junction Temperature
Storage Temperature Range
150
Tstg
-55∼ 150
℃
Thermal Characteristics
RthJC
RthJA
Thermal Resistance, Junction-to-Case
2.1
℃/W
℃/W
Thermal Resistance,
Junction-to-Ambient
62.5
PIN CONNECTION
D
G
S
2021. 12. 27
Revision No : 1
1/6