Datasheet > KPM11N65F

KPM11N65F

更新时间： 2024-12-01 17:15:39

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	436K
描述
TO-220IS(1)

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KPM11N65F 数据手册

KPM11N65F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This Super Junction MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge, low EMI

characteristics and excellent avalanche characteristics. It is mainly

suitable for active power factor correction and switching mode power

supplies.

DIM MILLIMETERS

10.16 0.2

15.87 0.2

2.54 0.2

0.8 0.1

3.18

0.1

FEATURES

3.3 0.1

12.57 0.2

· V_DSS=650V, I_D=11A

· Drain-Source ON Resistance :

R_DS(ON)(Max)=0.38Ω @V_GS=10V

· Qg(typ.)= 26nC

0.5 0.1

13.0 0.5

3.23 0.1

1.47 MAX

2.54 0.2

6.68 0.2

MAXIMUM RATING (Tc=25℃)

4.7

0.2

1. GATE

2. DRAIN

3. SOURCE

2.76 0.2

CHARACTERISTIC

SYMBOL

RATING

UNIT

*Single Gauge Lead Frame

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

T_C=25℃

650

±30

11*

TO-220IS (1)

I_D

Drain Current

T_C=100℃

6.9*

24*

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

289

5.6

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

46.3

0.37

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.7

℃/W

Thermal Resistance,

Junction-to-Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2021. 12. 27

Revision No : 1

1/6

12 3 4 5 6

中文翻译

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