Datasheet > KPE4403A

KPE4403A

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
可易亚 - KIA		/
页数	文件大小	规格书
4页	345K
描述
SOP-8

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中文翻译

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数据手册

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KPE4403A 数据手册

-5.0A，-30V

P-CHANNEL MOSFET

KPE4403A

KIA

SEMICONDUCTORS

1.Features



R_DS(on)=40mΩ(typ)@ V_GS=10 V

Green device available

Super low gate charge

Excellent Cdv/dt effect decline

Advanced high cell density trench technology

2.Description

The KPE4403A is the high cell density trenched P-channel MOSFET, which provide excellent

RDSON and gate charge for most of the synchronous buck converter applications. The KNE4403A

meet the RoHS and Green product requirement.

3.Symbol

4.Absolute maximum ratings

Parameter

Symbol

Rating

Units

Drain-source voltage

Gate-source voltage

V_DS

V_GS

-30

+20

-5.0

-3.9

T_C=25ºC

T_C=70ºC

Continuous drain current V_GS@-10V¹

I_D

Pulsed drain current²

Single pulse avalanche energy³

I_DM

EAS

I_AS

-25

18.1

-19

Avalanche current

Total power dissipation⁴

T_A=25ºC

P_D

1.5

Junction and storage temperature range

Thermal resistance-junction to ambient¹

Thermal resistance-junction to case¹

T_{J ,}T_STG

R_θJA

R_θJC

-55 to150

ºC

ºC/W

1 of 4

Rev 1.0 Aug. 2018

12 3 4

中文翻译

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