Datasheet > KPA1816

KPA1816

更新时间： 2025-07-19 05:40:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	49K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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KPA1816 数据手册

SMD Type

ICIC

MOS Field Effect Transistor

KPA1816

TSSOP-8

Unit: mm

Features

1.8V drive available

Low on-state resistance

R^DS(on)1= 15 m TYP. (VGS = -4.5 V, ID = -4.5 A)

R^DS(on)2= 16 m TYP. (VGS = -4.0 V, ID = -4.5 A)

R^DS(on)3= 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A)

R^DS(on)4= 41.5 m TYP. (VGS = -1.8 V, ID = -2.5 A)

Built-in G-S protection diode against ESD

1, 2, 3 : Source

4 : Gate

5, 6, 7, 8: Drain

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage (V^GS= 0)

Gate to Source Voltage (V^DS= 0)

Drain Current (DC) Ta = 25

Drain Current (Pulse) *1

Symbol

Rating

Unit

VDSS

VGSS

ID(DC)

I^D(pulse)

-12

8.0

9.0

Total Power Dissipation(2 unit) *2

Channel Temperature

2.0

Tch

150

Storage Temperature

Tstg

-55 to + 150

*1 PW

10 s, Duty cycle

1 %

*2 Mounted on ceramic substrate of 5000mm²X1.1 mm

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与KPA1816相关器件

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KPA1871	TYSEMI	获取价格	Can be driven by a 2.5-V power source Low on-state resistance (VGS = 4.5 V, ID = 3.0 A)
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KPA1873	TYSEMI	获取价格	2.5 V drive available Built-in G-S protection diode against ESD Low on-state resistance
KPA1890	KEXIN	获取价格	MOS Field Effect Transistor
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