KP6000-POWER THYRISTOR
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
************************************************************************************************************************************
1200-1800V
DRM
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
KT110cT
. All Diffused Structure
. Amplifying Gate Configuration
. Blocking capability up to 1800 volts
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
V
(1)
V
(1)
V
(1)
Device Type
KP6000/12
KP6000/14
KP6000/16
KP6000/18
Notes:
RRM
DRM
RSM
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 67% rated VDRM. Gate open.
Tj = 125 oC.
1200
1400
1600
1800
1200
1400
1600
1800
1400
1600
1800
2000
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
(5).The value of di/dt is established in
accordance with standard JB/T
8950.2-2013
Repetitive peak reverse
IRRM/IDRM
5 mA
leakage and off state leakage
200 mA (3)
Critical rate of voltage rise
dV/dt (4)
1000 V/sec
Conducting - on state
Parameter
Symbol
Min.
Max.
Typ.
Units Conditions
Average value of on-state current
RMS value of on-state current
IT(AV)
ITRMS
ITSM
I2t
6000
9420
72000
26x106
1000
200
A
A
Sinewave,180o conduction,Tc=65oC
Nominal value
Peak one cycle surge
(non repetitive) current
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
A
I square t
A2s
10 msec
Latching current
IL
mA
mA
V
VD = 12 V; RL= 12 ohms
VD = 12 V; I = 2.5 A
ITM=5000A;Tj =25oC
Tj=125oC
Holding current
IH
Peak on-state voltage
Threshold voltage, low-level
Slope Resistance, low-level
VTM
VTO
rT
1.3
0.83
V
0.056
mΩ
3000A to 10000A
Critical rate of rise of on-state
current
di/dt
200
A/μs
Repetition
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