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KP580-74 PDF预览

KP580-74

更新时间: 2024-03-03 10:09:40
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KP580-74 数据手册

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KP580-POWER THYRISTOR  
Jiangsu Yangjie Runau Semiconductor Co.,Ltd  
************************************************************************************************************************************  
7400-8500V  
DRM  
FREE FLOATING TYPE THYRISTOR FOR PHASE CONTROL APPLICATIONS  
Features:  
KT55dT  
. Free-floating silicon technology  
. Low on-state and switching losses  
. Optimum power handling capability  
. Blocking capability up to 8500 volts  
. Distributed amplifying gate  
ELECTRICAL CHARACTERISTICS AND RATINGS  
Blocking - Off State  
V
(1)  
V
(1)  
V
(1)  
Device Type  
KP580/74  
KP580/80  
KP580/85  
RRM  
DRM  
RSM  
Notes:  
7400  
8000  
8500  
7400  
8000  
8500  
7400  
8000  
8500  
(1) All voltage ratings are specified for an applied  
50Hz/60zHz sinusoidal waveform over the  
temperature range 0 to +115 oC.  
(2) 10 msec. max. pulse width  
(3) Maximum value for Tj = 115 oC.  
(4) Minimum value for linear and exponential  
waveshape to 67% rated VDRM. Gate open.  
Tj = 115 oC.  
VRRM = Repetitive peak reverse voltage  
VDRM = Repetitive peak off state voltage  
VRSM = Non repetitive peak reverse voltage (2)  
(5).The value of di/dt is established in  
accordance with JB/T 8950.2-2013  
Repetitive peak reverse  
IRRM/IDRM  
10mA  
100 mA (3)  
leakage and off state leakage  
Critical rate of voltage rise  
dV/dt (4)  
2000 V/sec (min)  
Conducting - On State  
Parameter  
Symbol  
Min.  
Max.  
Typ.  
Units Conditions  
Average value of on-state current  
RMS value of on-state current  
IT(AV)  
ITRMS  
ITSM  
I2t  
580  
910  
A
A
Sinewave,180o conduction,Tc=70oC  
Nominal value  
Peak one cycle surge  
(non repetitive) current  
10.0 msec (50Hz), sinusoidal wave-  
shape, 180o conduction, Tj = 115 oC  
6000  
1.8x105  
1000  
200  
A
I square t  
A2s  
10 msec  
Latching current  
IL  
mA  
mA  
V
VD = 12 V; RL= 12 ohms  
VD = 12 V; I = 2.5 A  
ITM=1000A;Tj =25oC  
Tj=115oC  
Holding current  
IH  
Peak on-state voltage  
Threshold voltage, low-level  
Slope resistance, low-level  
VTM  
VTO  
rT  
2.80  
1.30  
V
1.50  
mΩ  
300A to1000A  
Critical rate of rise of on-state  
current  
di/dt  
100  
A/μs  
Repetition  
http://www.chinarunau.com  
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