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KP500-24 PDF预览

KP500-24

更新时间: 2024-11-28 15:18:07
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
3页 238K
描述
T5C

KP500-24 数据手册

 浏览型号KP500-24的Datasheet PDF文件第2页浏览型号KP500-24的Datasheet PDF文件第3页 
KP500-POWER THYRISTOR  
Jiangsu Yangjie Runau Semiconductor Co.,Ltd  
************************************************************************************************************************************  
2000-2400V  
DRM  
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS  
Features:  
KT40cT  
. All Diffused Structure  
. Amplifying Gate Configuration  
. Blocking capability up to 2400 volts  
. High dV/dt Capability  
. Pressure Assembled Device  
ELECTRICAL CHARACTERISTICS AND RATINGS  
Blocking - Off State  
V
(1)  
V
(1)  
V
(1)  
Device Type  
KP500/20  
KP500/22  
KP500/24  
RRM  
DRM  
RSM  
Notes:  
2000  
2200  
2400  
2000  
2200  
2400  
2200  
2400  
2600  
(1) All voltage ratings are specified for an applied  
50Hz/60zHz sinusoidal waveform over the  
temperature range 0 to +125 oC.  
(2) 10 msec. max. pulse width  
(3) Maximum value for Tj = 125 oC.  
(4) Minimum value for linear and exponential  
waveshape to 67% rated VDRM. Gate open.  
Tj = 125 oC.  
VRRM = Repetitive peak reverse voltage  
VDRM = Repetitive peak off state voltage  
VRSM = Non repetitive peak reverse voltage (2)  
(5).The value of di/dt is established in  
accordance with standard JB/T  
8950.2-2013  
Repetitive peak reverse  
IRRM/IDRM  
2 mA  
60 mA (3)  
leakage and off state leakage  
Critical rate of voltage rise  
dV/dt (4)  
1000 V/sec  
Conducting - On State  
Parameter  
Symbol  
Min.  
Max.  
Typ.  
Units Conditions  
Average value of on-state current  
RMS value of on-state current  
IT(AV)  
ITRMS  
ITSM  
I2t  
500  
785  
A
A
Sinewave,180o conduction,Tc=70oC  
Nominal value  
Peak one cycle surge  
(non repetitive) current  
10.0 msec (50Hz), sinusoidal wave-  
shape, 180o conduction, Tj = 125 oC  
7000  
2.5x105  
1000  
200  
A
I square t  
A2s  
10 msec  
Latching current  
IL  
mA  
mA  
V
VD = 12 V; RL= 12 ohms  
VD = 12 V; I = 2.5 A  
ITM=1500A;Tj =25oC  
Tj=125oC  
Holding current  
IH  
Peak on-state voltage  
Threshold voltage, low-level  
Slope Resistance, low-level  
VTM  
VTO  
rT  
1.8  
1.15  
0.5  
V
mΩ  
500A to 2000A  
Critical rate of rise of on-state  
current  
di/dt  
150  
A/μs  
Repetition  
http://www.chinarunau.com  
Page 1 of 3  

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